Answers are grounded in this paper and cite their sources.
A wide bandwidth (8 GHz) and a high gain-bandwidth product (70 GHz) have been achieved with InP/InGaAsP/InGaAs avalanche photodiodes (APD’s) grown by chemical beam epitaxy. These APD’s also exhibit low dark current (<150 nA at 90% breakdown), good external quantum efficiency (>90% at λ=1.3 μm), and high avalanche gain (M0≂40).
No takes yet. Share an insight, caveat, or question.
Campbell et al. (1987) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: