Planar-structure InP/InGaAsP/InGaAs avalanche photo-diodes have been realised by using a VPE-growth technique and a Be+ implanted guard ring. Sensitivity measurement has been performed at 1.3 μm and 1.8 Gbit/s. The minimum average received level required for 10−9 BER was −31.3 dBm, which was 1.2 dB better than the value for the Ge-APD.
No takes yet. Share an insight, caveat, or question.
Sugimoto et al. (1984) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: