We report the operation of the first Ga0.47In0.53As/InP superlattice avalanche photodiode grown by metalorganic chemical vapor deposition. The undoped region of the p-i-n structure consists of 100 periods of alternating InP and Ga0.47In0.53As layers 100 A˚ thick with no intentional doping. dc multiplication higher than 20 and high-speed response with full width at half-maximum of 200 ps have been measured.
No takes yet. Share an insight, caveat, or question.
Beltram et al. (1987) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: