InGaAs/InP superlattice avalanche photodetectors grown by gas source molecular beam epitaxy

Preparation and performance of separate avalanche and multiplication superlattice photodiodes are reported. The absorbing region of these devices consists of up to 100 InGaAs quantum wells separated by InP barriers grown by gas source molecular beam epitaxy. The well size varies from 50 to 20 Å with very well-resolved exciton structures visible at room temperature. With the p-n junction displaced into the InP layer, leakage currents as low as 0.1 nA are obtained at unity gain bias of 20 V. dc avalanche gain of up to 280 and rf gain of 20 are observed at a bias of 38 V.