Various chemical methods have been utilized to prepare InN nanocrystals, nanowires and nanotubes, which have been characterized by several techniques (see TEM images). The nanostructures exhibit an absorption band in the near-IR region at around 0.7 eV, which rather than being caused by defects, is shown to be an intrinsic and characteristic feature of InN.
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Sardar et al. (2004) studied this question.
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