Ultra high voltage MOS controlled 4H-SiC power switching devices

Sei‐Hyung Ryu; Craig Capell; Edward Van Brunt; Charlotte Jonas; Michael O’Loughlin; Jack Clayton; Khiem Lam; Vipindas Pala; Brett Hull; Yemane Lemma; Daniel J. Lichtenwalner; Q J Zhang; Jim Richmond; Peter C. Butler; D.E. Grider; Jeff B. Casady; Scott T. Allen; John W. Palmour; Miguel Hinojosa; C. W. Tipton; Charles Scozzie

doi:10.1088/0268-1242/30/8/084001

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Abstract

Ultra high voltage MOS controlled 4H-SiC power switching devices, Ryu, S, Capell, C, Van Brunt, E, Jonas, C, O’Loughlin, M, Clayton, J, Lam, K, Pala, V, Hull, B, Lemma, Y, Lichtenwalner, D, Zhang, Q J, Richmond, J, Butler, P, Grider, D, Casady, J, Allen, S, Palmour, J, Hinojosa, M, Tipton, C W, Scozzie, C

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Ryu et al. (2015) studied this question.

synapsesocial.com/papers/6a9b04f3037e05db2f1c6d26 https://doi.org/10.1088/0268-1242/30/8/084001

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Ultra high voltage MOS controlled 4H-SiC power switching devices

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