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March 1, 1983IEEE Electron Device Letters

The COMFET—A new high conductance MOS-gated device

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Authors

JRJohn P. RussellKing's College LondonAGAlvin M. GoodmanBoston UniversityLGL.A. GoodmanMedical College of Wisconsin

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Russell et al. (1983) studied this question.

synapsesocial.com/papers/6a7bfcceae178dbf17c65032https://doi.org/10.1109/edl.1983.25649
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