Deep levels in MOCVD AI 0.48 In 0.52 As/InP

Defects in Al0.48In0.52As grown by MOCVD have been investigated by DLTS measurement. Four electron traps were observed in as-grown AlInAs, and one further in samples after annealing at TA >450°C. The densities of the defects El, E2 and E3 were found to decrease with an increase in growth temperature, and are suggested to result from excess arsenic, for example an interstitial arsenic atom. Defect E4 was not observed consistently but had a high surface concentration, which may be related to the growth contamination.