Defect annealing in Cu(In,Ga)Se2 heterojunction solar cells after high-energy electron irradiation

This is the authors' abstract. We don't add key points for this paper.

Cu(In,Ga)Se 2 /CdS/ZnO solar cells need at least 1018 cm−2 electrons of an energy of 1 MeV to degrade in their power conversion efficiency by more than 25%. Even after such high irradiation doses, annealing of the irradiated solar cells at temperatures between 130 and 160 °C leads to a full recovery of the device performance. Isochronal annealing experiments unveil that the annealing of the irradiation-induced defects has an activation energy of 1.05 eV.