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We present a comparative study of the electrical characteristics of different 1200V commercial SiC power MOSFETs at cryogenic temperatures down to 77 K. As compared to conventional silicon power MOSFETs, SiC MOSFETs show very different operating characteristics at low temperatures which is due to unique material and design parameters used in SiC MOSFETs. Of particular interest is a non-linear mixed triode/pentode-like I-V characteristic exhibited by all SiC MOSFETs at 77 K, which is demonstrated to be due to short channel effects in the constituent JFET.
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Chowdhury et al. (2017) studied this question.