A fast measurement technique of MOSFETI/sub d/-V/sub g/ characteristics

We developed an improved ultrafast measurement method for threshold voltage V/sub th/ measurement of MOSFETs. We demonstrate I/sub d/--V/sub g/ curve measurement within 1 μs to extract the threshold voltage of MOSFET. Errors arising from MOSFET parasitics and measurement setup are analyzed quantitatatively. The ultrafast V/sub th/ measurement is highly needed in the investigation of gate dielectric charge trapping effect when traps with short detrapping time constants are present. Application in charge trapping measurement on HfO2gate dielectric is demonstrated.