Chemical vapor deposition-assembled graphene field-effect transistor on hexagonal boron nitride

This is the authors' abstract. We don't add key points for this paper.

We investigate key electrical properties of monolayer graphene assembled by chemical vapor deposition (CVD). Graphene field-effect transistors (GFETs) were fabricated with carbon channel placing directly on hexagonal boron nitride (h-BN) and SiO2. Small-signal transconductance (gm) and effective carrier mobility (μeff) are improved by 8.5 and 4 times on h-BN, respectively, as compared with that on SiO2. Compared with GFET with exfoliated graphene on SiO2, gm and μeff measured from device with CVD graphene on h-BN substrate exhibit comparable values. The experiment demonstrates the potential of employing h-BN as a platform material for large-area carbon electronics.