Experimental study reveals two deep defect levels in float-zone nitrogen-doped silicon, highlighting minimal dopant-related electrical trap formation.
Two deep levels at E c-0.19 eV and E c-0.28 eV are found in nitrogen-doped silicon, in which nitrogen is doped during crystal growth by the float-zone method. The E c-0.19 eV level has an electron capture cross section of 8×10-17 cm2 and the E c-0.28 eV level has that of 5×10-16 cm2. The concentrations of the former and latter levels are about 0.1 and 0.01% of the doped nitrogen concentration (∼1015 cm-3), respectively.
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Tokumaru et al. (1982) studied this question.
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