Transparent and conducting SnOx thin films were made by reactive rf magnetron sputtering of Sn in Ar+O2 onto unheated glass. Optical and electrical properties were reconciled with a quantitative model for wide band-gap semiconductors. The theory is based on heavy n doping by doubly ionized oxygen vacancies and ionized impurity scattering of the free electrons.
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Stjerna et al. (1990) studied this question.
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