Electron Scattering by a Layer of Dislocation Lines in a Semiconductor

If dislocation lines are arranged periodically in a plane, the dc and the dynamical transport properties may become anisotropic around a single dislocation. The ratio of the resistivities for transport parallel and perpendicular to the plane are calculated using the energy loss method. Geometrical resonances appearing in the plasmon and in the power law regime are explained in terms of Bragg reflections by the periodic arrangement.