Answers are grounded in this paper and cite their sources.
Influences of GaAs cap layer thickness on residual strain in partially relaxed, 25-nm-thick In0.2Ga0.8As/GaAs single quantum wells have been investigated by photoluminescence and photoreflectance at 77 K. It was found that the residual strain increased and the optical quality improved with increasing cap layer thickness. Therefore, both quantum well and cap layer thicknesses determine the optical quality in lattice-mismatched semiconductor heterostructures.
No takes yet. Share an insight, caveat, or question.
Wang et al. (1994) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: