Nonreduction-Active Hole-Transporting Layers Enhancing Open-Circuit Voltage and Efficiency of Planar Perovskite Solar Cells

Inverted planar perovskite solar cells using poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) as the hole-transporting layer (HTL) are very attractive because of their low-temperature and easy processing. However, the planar cells with the PEDOT:PSS HTL typically display lower open-circuit voltage ( V OC ) (about 0.90 V) than that of devices with TiO 2 -based conventional structure (1.0–1.1 V). The underlying reasons are still not clear. In this work, we report the PEDOT:PSS that is intrinsically p-doped can be chemically reduced by methylamine iodide (MAI) and MAPbI 3 . The reaction reduces the work function (WF) of PEDOT:PSS, which suppresses the efficient hole collection and yields lower V OC . To overcome this issue, we adopt undoped semiconducting polymers that are intrinsically nonreduction-active (NRA) as the HTL for inverted planar perovskite solar cells. The cells display enhanced V OC from 0.88 ± 0.04 V (PEDOT:PSS HTL, reference cells) to 1.02 ± 0.03 V (P3HT HTL) and 1.04 ± 0.03 V (PTB7 and PTB-Th HTL). The power conversion efficiency (PCE) of the devices with these NRA HTL reaches about 17%.