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A gain-coupled (GC) distributed feedback (DFB) semiconductor laser with an absorptive conduction-type-inverted grating is proposed. Devices based on GaAlAs/GaAs materials are fabricated using two-step OMVPE. By inverting the conduction type of the absorptive region, threshold current is lowered by 10 mA, which is to compensate for the threshold increase due to extra absorption. In addition, nonlinear output property associated with the saturable nature of the absorption is eliminated. An ultralow chirping capability under gain switching high speed modulation and the narrow linewidth nature of this laser are experimentally studied.>
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Luo et al. (1992) studied this question.
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