1/fnoise in bismuth consistent with defect motion

The temperature dependence of the 1/f noise in bismuth films and whiskers was studied. Undamaged whiskers had less normalized noise power than films. Ion milling increased the normalized noise power in two whiskers to values close to those of the films. None of the whiskers showed the clear peak in the noise-versus-temperature curve found in the films. In the films, under some conditions low magnetic fields reduced the resistance fluctuations, despite the positive magnetoresistance. The frequency of the peak in the noise power shifted as a function of temperature, fitting an Arrhenius law with reasonable parameters for defect motion.