The letter describes the fabrication procedure and the electrical properties of a double polysilicon plate capacitor with composite SiO2/Si3N4 insulators. The presence of the Si3N4 layer allows elimination completely of low-voltage breakdown events and reduces the leakage current to the 10−9 A/cm2 level. Different layout configurations are compared based on the evaluation of experimental data.
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Gildenblat et al. (1982) studied this question.
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