Initial observations of optical injection locking of GaAs metal semiconductor field effect transistor oscillators

An experiment is described in which the output of a GaAlAs laser, modulated at 2.345 GHz, was used to optically injection lock a GaAs metal semiconductor field effect transistor oscillator. A substantial reduction of the FM noise of the field effect transistor oscillator, associated with locking to the more stable modulation signal applied to the laser, was obtained. The locking range obtained was 5 MHz, but possibilities for considerably increasing this are suggested.