We have introduced ammonium sulfide ((NH4)2S x /(NH4)2S) treatment to reduce the surface recombination in the regrowth process of an AlGaAs/GaAs buried heterostructure (BH) laser by MOCVD. The (NH4)2S x -treated BH lasers showed much lower threshold current than BH lasers without the chemical passivation. This fabrication technology is expected to be very effective for the realization of ultralow-threshold micro-cavity lasers with a few-micron or submicron cavity structure.
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Tamanuki et al. (1991) studied this question.
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