What question did this study set out to answer?

Investigate the chemical, structural, and electronic surface properties of GaAs crystal planes following ammonium polysulfide passivation.

March 1, 1989Japanese Journal of Applied PhysicsOpen Access

Studies on an (NH4)2Sx-Treated GaAs Surface Using AES, LEELS and RHEED

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Authors

HOHaruhiro OigawaUniversity of Tsukuba JFJia-Fa FanUniversity of Tsukuba YNYasuo NannichiUniversity of Tsukuba

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Implication

Spectroscopic analysis demonstrates oxide-free sulfur termination and reduced interface state density across GaAs crystal planes, indicating stronger gallium-sulfur bonding aids passivation.

Key Points

Investigate the chemical, structural, and electronic surface properties of GaAs crystal planes following ammonium polysulfide passivation.
Treated GaAs (100), (111)Ga, and (1̄1̄1̄)As crystal planes with an aqueous (NH4)2Sx solution.
Characterized surface composition, chemical bonding, and crystal structure using Auger electron spectroscopy, low-energy electron energy loss spectroscopy, and reflection high-energy electron diffraction.
Ammonium polysulfide treatment produced oxide-free, sulfur-terminated GaAs surfaces that reduced interface state density.
Sulfur bonded to both gallium and arsenic atoms, with Ga-S bonds displaying greater strength and stability than As-S bonds across different crystallographic orientations.

Cite This Study

Oigawa et al. (1989) studied this question.

synapsesocial.com/papers/6a9de8e84c53cd4efa42bbd1 https://doi.org/10.1143/jjap.28.l340

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Implication

Spectroscopic analysis demonstrates oxide-free sulfur termination and reduced interface state density across GaAs crystal planes, indicating stronger gallium-sulfur bonding aids passivation.

Studies on an (NH4)2Sx-Treated GaAs Surface Using AES, LEELS and RHEED

Discussion

Member takes

Implication

Key Points

Cite This Study

Studies on an (NH4)2Sx-Treated GaAs Surface Using AES, LEELS and RHEED

Discussion

Member takes

Implication

Key Points

Cite This Study

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