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January 23, 1989Applied Physics Letters

Electronic passivation of GaAs surfaces through the formation of arsenic—sulfur bonds

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Authors

CSC. J. SandroffStevens Institute of TechnologyMHM. S. HegdeUniversity of North Carolina at Chapel HillLFL. A. FarrowOak Ridge National Laboratory

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Sandroff et al. (1989) studied this question.

synapsesocial.com/papers/6a7e318dd2dab736758561f2https://doi.org/10.1063/1.101451
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