What question did this study set out to answer?

To evaluate how ammonium sulfide surface passivation and thermal pre-treatment influence the epitaxial growth of aluminum films on gallium arsenide substrates.

April 1, 1990Japanese Journal of Applied Physics

Epitaxial Growth of Al on (NH4)2Sx-Treated GaAs

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Authors

HOHaruhiro OigawaUniversity of Tsukuba JFJia-Fa FanUniversity of Tsukuba YNYasuo NannichiUniversity of Tsukuba

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Implication

Experimental study demonstrates single-crystal aluminum film growth on sulfur-treated gallium arsenide after 300°C preheating, indicating sulfur alignment enhances semiconductor processing.

Key Points

To evaluate how ammonium sulfide surface passivation and thermal pre-treatment influence the epitaxial growth of aluminum films on gallium arsenide substrates.
Treated (100) gallium arsenide surfaces with an ammonium sulfide ((NH4)2Sx) chemical solution.
Applied a 300°C thermal pre-treatment prior to aluminum deposition and compared it against an unheated control.
Characterized film crystallization and surface structure using reflection high-energy electron diffraction (RHEED).
Substrate preheating at 300°C yielded single-crystal epitaxial (110) aluminum films on the treated gallium arsenide surface.
Deposition without pre-heating resulted in polycrystalline aluminum films due to disordered sulfur atom alignment.

Cite This Study

Oigawa et al. (1990) studied this question.

synapsesocial.com/papers/6a9b2bea4aebfed16e377be0 https://doi.org/10.1143/jjap.29.l544

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Implication

Experimental study demonstrates single-crystal aluminum film growth on sulfur-treated gallium arsenide after 300°C preheating, indicating sulfur alignment enhances semiconductor processing.

Epitaxial Growth of Al on (NH4)2Sx-Treated GaAs

Discussion

Member takes

Implication

Key Points

Cite This Study

Epitaxial Growth of Al on (NH4)2Sx-Treated GaAs

Discussion

Member takes

Implication

Key Points

Cite This Study

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