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August 2, 1999Applied Physics Letters

Nucleation layer microstructure, grain size, and electrical properties in GaN grown on a-plane sapphire

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Authors

MTM. E. TwiggRHR. L. HenryUnited States Naval Research LaboratoryAWA. E. WickendenUnited States Naval Research Laboratory

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Twigg et al. (1999) studied this question.

synapsesocial.com/papers/6a9b8f47ce814810eebb01e9https://doi.org/10.1063/1.124482
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