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December 15, 1997Applied Physics Letters

GaN growth on Si(111) substrate using oxidized AlAs as an intermediate layer

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NKNobuhiko P. KobayashiUniversity of California, Santa CruzJKJ. T. KobayashiUniversity of Southern CaliforniaPDP.D. DapkusUniversity of Southern California

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Kobayashi et al. (1997) studied this question.

synapsesocial.com/papers/6a9782fdb58c727d448be016https://doi.org/10.1063/1.120394
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