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May 29, 1995Applied Physics Letters

High quality AIN and GaN epilayers grown on (00⋅1) sapphire, (100), and (111) silicon substrates

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Authors

PKPatrick KungNorthwestern UniversityASA. SaxlerWolfspeed, Inc. (United States)XZX. ZhangNorthwestern University

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Kung et al. (1995) studied this question.

synapsesocial.com/papers/6aaa4cb2bf40485a047e5e4dhttps://doi.org/10.1063/1.114242
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