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FeNi thin films with the in-plane uniaxial anisotropy were fabricated by direct current magnetron sputtering. An FeNi/piezoelectric actuator hybrid structure was used to investigate the voltage-controlled magnetization switching. A theoretical calculation was performed to provide a simplified vision of the magnetoelastic contribution to the magnetic anisotropy. Magneto-optical Kerr effect measurements were performed and the rotation of the magnetization easy axis in the FeNi film upon application of a voltage with or without the application of a magnetic field was demonstrated. A film-thickness dependent in-plane magnetization easy axis rotation angle was observed and explained by the variation of the magnetostriction.
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Xi et al. (2013) studied this question.
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