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Carrier tunneling through (Cd,Zn)Te barriers of different thicknesses is investigated in CdTe/Cd,Zn)Te asymmetric double quantum wells by use of time-resolved photoluminescence and steady-state photoluminescence excitation experiments. The strong dependence of the observed tunneling times on the barrier thickness indicates a resonant tunneling behavior. The analysis of our results allows us to identify the importance of excitons rather than free-carrier states for the tunneling mechanism.
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Haacke et al. (1993) studied this question.
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