Solid phase epitaxy of evaporated amorphous silicon films

Amorphous silicon films were deposited in an electron beam evaporator. Substrates of silicon (100) wafers with predeposited epitaxial films were held at 380 °C to avoid porosity. Processing of the films before annealing may include implantation. Solid state epitaxy is then achieved by annealing at 600 °C for 30 min.