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November 15, 1980Applied Physics Letters

Epitaxial growth of Si deposited on (100) Si

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LHL. S. HungUnited Microelectronics (Taiwan)SLS.S. LauUniversity of OxfordMAM. von AllmenÉcole Polytechnique Fédérale de Lausanne

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Hung et al. (1980) studied this question.

synapsesocial.com/papers/6a9019b011fe3daa372b0c06https://doi.org/10.1063/1.91855
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