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October 1, 1977Journal of Applied Physics

Influence of 16O, 12C, 14N, and noble gases on the crystallization of amorphous Si layers

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Authors

EKEamonn KennedyUniversity of UtahLCL. CsepregiFraunhofer SocietyJMJ. W. MayerON Semiconductor (United States)

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Kennedy et al. (1977) studied this question.

synapsesocial.com/papers/6a853c3ce1eabc68e2929223https://doi.org/10.1063/1.323409
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