Uniformly sized hexagonal shaped manganese oxide (MnO) nanoparticles were chemically synthesized. The bipolar resistive switching characteristics were investigated in the Ti/MnO/Pt structure. The nanoparticles were assembled as close-packed monolayer with a thickness of 30 nm by dip-coating and annealing procedures. The bipolar resistive switching behaviors in Ti/MnO/Pt device could be caused by the formation and rupture of conductive filaments in the nanoparticles. The temperature dependence of resistance was discussed. The resistance of HRS presented a negative temperature dependence at high temperature, indicating a typical semiconducting behavior. The resistance of LRS increased with the elevated temperature exhibiting a metallic state. Ohmic conduction, space charge limited conduction (SCLC), and Schottky conduction have been investigated for the conduction and switching mechanism.
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Hu et al. (2014) studied this question.
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