Local mode absorption lines have been measured in n-type gallium phosphide samples heavily doped with silicon which were rendered transparent by 2 MeV electron irradiation. Lines at 455.7 and 495.4 cm -1 are attributed to (Si(Ga)-Si(P)) nearest-neighbour pairs and other lines a 412.8 and 430.4 may arise from the same defects. Lines at 450.7, 485.8, 561.3 and 690.7 cm -1 are ascribed to (Si(Ga)-C(P)) close pairs. The former results are compared with previous observations made on gallium arsenide crystals.
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Morrison et al. (1974) studied this question.
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