Characterization of quanta image sensor pixels with deep sub-electron read noise is reported. Pixels with conversion gain of 423μ V /e- and read noise as low as 0.22e- r.m.s. were measured. Dark current is 0.1e-/s at room temperature, and lag less than 0.1e-. This is one of the first works reporting detailed characterization of image sensor pixels with mean signals from sub-electron (0.25e-) to a few electrons level. Such pixels in a nearly-conventional CMOS image sensor process will allow realization of photon-counting image sensors for a variety of applications.
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Ma et al. (2015) studied this question.
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