Beryllium-doped GaAs grown by the liquid phase epitaxial technique shows an infrared absorption line due to the localized vibrations of 9 Be Ga at 482 cm -1 . This is discussed in relation to vibrations of 9 Be Ga in GaP and boron in GaAs and GaP.
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Laithwaite et al. (1975) studied this question.
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