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March 1, 1991Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena

Etching reactions for silicon with F atoms: Product distributions and ion enhancement mechanisms

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Authors

HWHarold F. WintersUniversity of California, BerkeleyIPI. C. PlumbCommonwealth Scientific and Industrial Research Organisation

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Winters et al. (1991) studied this question.

synapsesocial.com/papers/6a9bec0c2072fd8addbb10e6https://doi.org/10.1116/1.585593
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