A note on experimental determination of small-signal equivalent circuit of millimeter-wave FETs

New expressions for determination of the parasitic inductances L/sub g/, L/sub d/, and L/sub s/ in the small-signal equivalent circuit of high-frequency field effect transistors (FETs) are derived, based on the active/passive (also known as hot/cold) measurement technique. These equations are required when the size of parasitic capacitances is such that their effect on the forward-biased gate measurement cannot be ignored, as has been the case with the millimeter-wave transistors. The method produces an equivalent circuit which has been used successfully for design of multistage amplifiers at 60 and 94 GHz.>