Point Defect Reactions around Dislocations in p-Type InP

Zn-doped p-type InP is studied before and after plastic deformation by means of deep level transient spectroscopy (DLTS). After plastic deformation by hardness indentations DLTS lines H4a and H4b associated with α-dislocations and H5 associated with β-dislocations are observed. Lines H4a and H4b are shown to originate in point defect clouds surrounding α-dislocations and can be transformed to a complex correlated with a DLTS line H4c. These results are accounted for proposing a model based on a charge state controlled defect reaction. The mean number of point defects per core atom, 〈p.d.〉, for each of the three species H4* (* = a, b or c) is very high: 〈p.d.〉 ≧ 10. Differences in the DLT spectra of α- and β-dislocations are ascribed to their different electronic core structure.