Pairing between Fast Diffusing Donors and Shallow Acceptors in p‐CdTe

Defect reactions of mobile intersitial donors D i with immobile substitutional acceptors A cd in the spacecharge region of Schottky contacts on p‐type CdTe are observed at about room temperature. The results are discussed in terms of formation and dissociation of defect complexes (A cd D i ). For copper diffused samples the dissociation kinetics of a complex, presumably (Cu Cd Cu i ), is determined. The dissociation enthalpy of 0.74 eV leads to the rather low value of 0.2 to 0.3 eV for the migration enthalpy of Cu i . Furthermore it is shown that thermally stimulated capacitance (TSCap) yields a step with a shape characteristic of defect complex dissociation and drift of the intersitial donor.