Deep levels associated with α and β dislocations in n-type InP

We describe an experimental method which allows us to investigate α and β dislocations in compound semiconductors separately by deep level transient spectroscopy. We use two linear configurations of hardness indentations surrounding a key-shaped metal-insulator-semiconductor contact on {100} planes of n-type InP to generate either α or β dislocations beneath the contact. We observe significant differences in the point defect concentration generated by the motion of the two types of dislocations.