All-optical switching in an asymmetric silicon Fabry–Perot étalon based on the free-carrier plasma effect

We demonstrate all-optical switching at 1.3 and 1.5 µm in the reflection mode of an asymmetric silicon Fabry-Perot étalon by a control beam at 0.85 µm. Both switch-on and switch-off operations are demonstrated at different locations of the etalon. Based on the free-carrier plasma effect, a modulation depth as large as 10% is obtained and a frequency response as high as 0.5 GHz is achieved.