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We demonstrate the cascade process in mid-infrared electroluminescent InAs/GaInSb/AlSb multi-quantum-well devices. We report the proportional relation between the emitted optical power and the number of periods. This observed scaling is associated with the sequential transport of electrons from one active region to the next situated downstream in potential energy through the injection region. Deviations from this exact scaling are correlated with the variation of the wafer-to-wafer structural quality.
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Dupont et al. (1998) studied this question.
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