A high efficiency electro-emission device (HEED) has been developed with a structure of Pt/SiO x /Si/Al on a thermally-oxidized Si substrate. The thicknesses of the SiO x and Si films were 400 nm and 5 µ m, respectively. Electron emission characteristics of the HEED are reported. It was found that the HEED has an electron-emission efficiency as high as 28% and a high brightness of 80 kcd/m2 using phosphor ZnS:Cu,Al. This high electron-emission efficiency was obtained in a range of applied voltage in which negative resistance occurred.
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Negishi et al. (1997) studied this question.
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