Growth rates for Si1−xGex films (0≤x≤0.19) have been measured between 610–750 °C using low pressure H2/SiH4/GeH4 mixtures and at different temperatures these rates show different dependencies on composition x. A model attributes this complex behavior to competition between an increasing rate for desorption of surface hydrogen and a decreasing sticking probability for the reactive hydrides as x increases. The latter effect is explicitly reported for the first time. GeH4 is found to be ∼4.7 times more reactive than SiH4, and relative surface hydrogen coverages on Si and Si0.87Ge0.13 films measured by secondary ion mass spectroscopy are compared with the model.
No takes yet. Share an insight, caveat, or question.
Robbins et al. (1991) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: