We report the deposition of epitaxial films of GexSi1−x on (100) silicon by the ultrahigh vacuum chemical vapor deposition technique. Epitaxial films grown at temperatures ranging from 577 to 665 °C have been characterized with respect to growth rate and germanium content. The results show features which have not been previously reported including an incubation time and a peak in the growth rate as a function of GeH4/H2 flow.
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Racanelli et al. (1990) studied this question.
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