Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
March 24, 1986Applied Physics Letters

Low-temperature silicon epitaxy by ultrahigh vacuum/chemical vapor deposition

View Full Paper
Ask AI
Bookmark
Share

Authors

BMB.S. MeyersonJohannes Kepler University of Linz

Discussion

Loading...

Member takes

Implication

Key Points

Key points are not available for this paper at this time.

Cite This Study

B.S. Meyerson (1986) studied this question.

synapsesocial.com/papers/6a74bf981646b2abe5033729https://doi.org/10.1063/1.96673
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 4 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1The pyrolysis of monosilane1966 · 182 citations
  2. 2Reaction of Oxygen with Si(111) and (100): Critical Conditions for the Growth of SiO21982 · 293 citations
  3. 3Silicon epitaxy at 650–800 °C using low-pressure chemical vapor deposition both with and without plasma enhancement1985 · 144 citations
  4. 4Interaction of H 2 O with Si(111) and (100): Critical Conditions for the Growth of1984 · 116 citations