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March 14, 1988Applied Physics Letters

Si/Ge0.3Si0.7/Si heterojunction bipolar transistor made with Si molecular beam epitaxy

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Authors

TTToru TatsumiRyukoku UniversityHHHiroyuki HirayamaUniversity of GenevaNANaoaki AizakiNEC (Japan)

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Tatsumi et al. (1988) studied this question.

synapsesocial.com/papers/6a83ec18fd07e211f9fe21e0https://doi.org/10.1063/1.99265
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