Suppression of film blistering in silicon nano-crystals/silicon oxide composite layer by insertion of intrinsic hydrogenated amorphous silicon layer

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We report on the mechanism of film blistering in silicon nano-crystals/silicon oxide composite layers and present a promising solution to suppress this issue by inserting an intrinsic hydrogenated amorphous silicon (i-a-Si:H) interlayer. It is speculated that blistering was caused by oxide precipitation and hydrogen aggregation within this structure. These oxide precipitations likely result from the interaction between the diborane gas used for p+-type polycrystalline Si (p+-poly-Si) deposition and the oxygen present in the silicon oxide (SiO x ) film. An i-a-Si:H interlayer inserted at the p+-poly-Si/SiO x interface effectively suppressed blistering. The i-a-Si:H interlayer effectively suppressed blistering, which may be attributed to efficient hydrogen uptake and improved interfacial adhesion. The solar cells employing the i-a-Si:H interlayer demonstrated a significant improvement in open circuit voltage and fill factor owing to the suppression of blistering. Our study gives valuable insight into blistering and the technique for its suppression.